Publication
J. Mater. Sci.: Mater. Electron. 35, 667 (2024)
Scintillation and photoluminescence properties of Al(DMSO)<sub>6</sub>SbCl</sub>6<sub> and Ga(DMSO)<sub>6</sub>SbCl<sub>6</sub> single crystals with zero-dimensional structures
Author
Keishi Yamabayashi, Kai Okazaki, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida
Category
Peer-reviewed Papers as First Author
Abstract
Al(DMSO)6SbCl6 and Ga(DMSO)6SbCl6 single crystals were synthesized by the solvent evaporation method and their optical and scintillation properties were investigated. Broad photoluminescence (PL) and scintillation peaks derived from the recombination of the self-trapped excitons were confirmed at 500–550 nm. The calculated PL quantum yields of Al(DMSO)6SbCl6 and Ga(DMSO)6SbCl6 were, respectively, 99.0 and 92.2%. The PL and scintillation decay time constants were estimated to be approximately 2.0 µs. The afterglow levels at 20 ms after X-ray irradiation for 2 ms were obtained to be 98 ppm (Al(DMSO)6SbCl6) and 63 ppm (Ga(DMSO)6SbCl6). The light yields (LY) of Al(DMSO)6SbCl6 and Ga(DMSO)6SbCl6 were 1100 and 800 photons/MeV under 137Cs γ-rays (662 keV) exposure.
